The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Dec. 05, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Yu-Chang Lin, Hsinchu, TW;

Wen-Tai Lu, Hsinchu, TW;

Li-Ting Wang, Hsinchu, TW;

Chun-Feng Nieh, Hsinchu, TW;

Hou-Yu Chen, Zhubei, TW;

Huicheng Chang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/223 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/2236 (2013.01); H01L 21/324 (2013.01); H01L 21/823412 (2013.01); H01L 29/66484 (2013.01); H01L 29/66795 (2013.01); H01L 29/7831 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor arrangement is provided. The semiconductor arrangement includes a first semiconductor device. The first semiconductor device includes a first active region having a first doped region and a second doped region over the first doped region. The second doped region includes a first bottom portion and a first sidewall. The first bottom portion includes a first bottom portion inner surface, a first bottom portion outer surface, a first bottom portion height and a first bottom portion width. The first sidewall includes a first sidewall inner surface, a first sidewall outer surface, a first sidewall width and a first sidewall height, the first sidewall height greater than the first bottom portion height. A method of making a semiconductor device is also provided.


Find Patent Forward Citations

Loading…