The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 22, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Jing-Cheng Lin, Hsin-Chu, TW;
Ya-Hsi Hwung, Hsin-Chu, TW;
Hsin-Yu Chen, Taipei, TW;
Po-Hao Tsai, Zhongli, TW;
Yan-Fu Lin, Zhubei, TW;
Cheng-Lin Huang, Hsin-Chu, TW;
Fang Wen Tsai, Hsin-Chu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01029 (2013.01);
Abstract
A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.