The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Dec. 27, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ming-Chih Yew, Hsin-Chu, TW;
Fu-Jen Li, Hsin-Chu, TW;
Po-Yao Lin, Zhudong Township, TW;
Chia-Jen Cheng, Banicao, TW;
Hsiu-Mei Yu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/40 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76885 (2013.01); H01L 24/05 (2013.01); H01L 24/82 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02235 (2013.01); H01L 2224/02255 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01029 (2013.01);
Abstract
A system and method for providing a post-passivation and underbump metallization is provided. An embodiment comprises a post-passivation layer that is larger than an overlying underbump metallization. The post-passivation layer extending beyond the underbump metallization shields the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.