The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jun. 09, 2011
Nicolas Posseme, Carantec, FR;
Laurent Grenouillet, Rives, FR;
Yannick Le Tiec, Crolles, FR;
Nicolas Loubet, Guilderland, NY (US);
Maud Vinet, Rives, FR;
Nicolas Posseme, Carantec, FR;
Laurent Grenouillet, Rives, FR;
Yannick Le Tiec, Crolles, FR;
Nicolas Loubet, Guilderland, NY (US);
Maud Vinet, Rives, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free.