The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Apr. 20, 2012
Frieder Hainrich Baumann, Hopewell Junction, NY (US);
Chao-kun HU, Yorktown Heights, NY (US);
Andrew H. Simon, Hopewell Junction, NY (US);
Tibor Bolom, Hopewell Junction, NY (US);
Koichi Motoyama, Albany, NY (US);
Chengyu Charles Niu, Hopewell Junction, NY (US);
Frieder Hainrich Baumann, Hopewell Junction, NY (US);
Chao-Kun Hu, Yorktown Heights, NY (US);
Andrew H. Simon, Hopewell Junction, NY (US);
Tibor Bolom, Hopewell Junction, NY (US);
Koichi Motoyama, Albany, NY (US);
Chengyu Charles Niu, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
STMICROELECTRONICS, INC., Coppell, TX (US);
Renesas Electronics Corporation, Kanagawa, JP;
GLOBALFOUNDRIES, INC., Grand Cayman Islands, KY;
Abstract
A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.