The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jun. 21, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Li-Lan Wu, Hsin-Chu, TW;
Chi-Yuan Chen, Hsin-Chu, TW;
Ming-Chyi Liu, Hsin-Chu, TW;
Cary Chia-Chiung Lo, Taipei, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Kuo-Yin Lin, Jhubei, TW;
Li-Ting Wang, Tainan, TW;
Wan-Chun Pan, Hsin-Chu, TW;
Ming-Liang Yen, New Taipei, TW;
Huicheng Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.