The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Aug. 24, 2012
Jia-jia Chen, Taichung, TW;
Chi-mao Hsu, Tainan, TW;
Tsun-min Cheng, Changhua County, TW;
Ching-wei Hsu, Changhua County, TW;
Szu-hao Lai, Kaohsiung, TW;
Huei-ru Tsai, Kaohsiung, TW;
Tsai-yu Wen, Tainan, TW;
Ching-li Yang, Ping-Tung Hsien, TW;
Chien-li Kuo, Hsinchu, TW;
Jia-Jia Chen, Taichung, TW;
Chi-Mao Hsu, Tainan, TW;
Tsun-Min Cheng, Changhua County, TW;
Ching-Wei Hsu, Changhua County, TW;
Szu-Hao Lai, Kaohsiung, TW;
Huei-Ru Tsai, Kaohsiung, TW;
Tsai-Yu Wen, Tainan, TW;
Ching-Li Yang, Ping-Tung Hsien, TW;
Chien-Li Kuo, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.