The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Aug. 31, 2012
Hsin-yu Chen, Taipei, TW;
Ku-feng Yang, Dali, TW;
Tasi-jung Wu, Hsin-Chu, TW;
Lin-chih Huang, Wuri Township, TW;
Yuan-hung Liu, Hsin-Chu, TW;
Tsang-jiuh Wu, Hsin-Chu, TW;
Wen-chih Chiou, Miaoli, TW;
Hsin-Yu Chen, Taipei, TW;
Ku-Feng Yang, Dali, TW;
Tasi-Jung Wu, Hsin-Chu, TW;
Lin-Chih Huang, Wuri Township, TW;
Yuan-Hung Liu, Hsin-Chu, TW;
Tsang-Jiuh Wu, Hsin-Chu, TW;
Wen-Chih Chiou, Miaoli, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first metallization layer formed over the interlayer dielectric layer, wherein the first metallization layer comprises a first metal line and a dielectric layer formed over the first metallization layer, wherein the dielectric layer comprises a metal structure having a bottom surface coplanar with a top surface of the first metal line.