The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Oct. 18, 2012
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shu-Hao Chang, Taipei, TW;
Tsiao-Chen Wu, Jhudong Township, TW;
Chia-Hao Hsu, Hsinchu, TW;
Chia-Chen Chen, Hsinchu, TW;
Ying-Yu Chen, Lotung, TW;
Tzu-Li Lee, Huwei, TW;
Shang-Chieh Chien, New Taipei, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Anthony Yen, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.