The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Sep. 20, 2006
Chen-hua Yu, Hsin-Chu, TW;
Ming-shih Yeh, Chupei, TW;
Chih-hsien Lin, Tainan, TW;
Yung-cheng LU, Taipei, TW;
Hui-lin Chang, Hsin-Chu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Ming-Shih Yeh, Chupei, TW;
Chih-Hsien Lin, Tainan, TW;
Yung-Cheng Lu, Taipei, TW;
Hui-Lin Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an integrated circuit includes providing a semiconductor substrate, forming a metallization layer over the semiconductor substrate, wherein the metallization layer comprises a metal feature in a low-k dielectric layer and extending from a top surface of the low-k dielectric layer into the low-k dielectric layer, performing a treatment to the low-k dielectric layer to form a hydrophilic top surface, and plating a cap layer on the metal feature in a solution.