The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Aug. 22, 2012
Ya-hsueh Hsieh, Kaohsiung, TW;
Chi-mao Hsu, Tainan, TW;
Hsin-fu Huang, Tainan, TW;
Min-chuan Tsai, New Taipei, TW;
Chien-hao Chen, Yun-Lin County, TW;
Chi-yuan Sun, Yulin County, TW;
Wei-yu Chen, Tainan, TW;
Chin-fu Lin, Tainan, TW;
Ya-Hsueh Hsieh, Kaohsiung, TW;
Chi-Mao Hsu, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Chien-Hao Chen, Yun-Lin County, TW;
Chi-Yuan Sun, Yulin County, TW;
Wei-Yu Chen, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any work function layers. Moreover, the present invention provides a MOS transistor process forming said MOS transistor.