The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Sep. 14, 2011
Toshihisa Nozawa, Miyagi, JP;
Masaru Sasaki, Miyagi, JP;
Jun Hashimoto, Albany, NY (US);
Shota Yoshimura, Miyagi, JP;
Toshihisa Ozu, Miyagi, JP;
Tetsuya Nishizuka, Beaverton, OR (US);
Toshihisa Nozawa, Miyagi, JP;
Masaru Sasaki, Miyagi, JP;
Jun Hashimoto, Albany, NY (US);
Shota Yoshimura, Miyagi, JP;
Toshihisa Ozu, Miyagi, JP;
Tetsuya Nishizuka, Beaverton, OR (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamberfor performing a plasma process on a target substrate W; a gas supply unitfor supplying a plasma processing gas into the processing chamber; a supporting table positioned within the processing chamberand configured to support the target substrate thereon; a microwave generatorfor generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamberby using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber; a bias power supply unit for supplying AC bias power to the supporting table; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.