The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Apr. 27, 2011
Applicants:

Se-hyuk Im, Austin, TX (US);

Mahadevan Ganapathisubramanian, Cedar Park, TX (US);

Edward Brian Fletcher, Austin, TX (US);

Niyaz Khusnatdinov, Round Rock, TX (US);

Gerard M. Schmid, Austin, TX (US);

Mario Johannes Meissl, Austin, TX (US);

Anshuman Cherala, Austin, TX (US);

Frank Y. Xu, Round Rock, TX (US);

Byung-jin Choi, Austin, TX (US);

Sidlgata V. Sreenivasan, Austin, TX (US);

Inventors:

Se-Hyuk Im, Austin, TX (US);

Mahadevan GanapathiSubramanian, Cedar Park, TX (US);

Edward Brian Fletcher, Austin, TX (US);

Niyaz Khusnatdinov, Round Rock, TX (US);

Gerard M. Schmid, Austin, TX (US);

Mario Johannes Meissl, Austin, TX (US);

Anshuman Cherala, Austin, TX (US);

Frank Y. Xu, Round Rock, TX (US);

Byung-Jin Choi, Austin, TX (US);

Sidlgata V. Sreenivasan, Austin, TX (US);

Assignees:

Canon Nanotechnologies, Inc., Austin, TX (US);

Molecular Imprints, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 45/76 (2006.01); G03F 7/00 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); B29C 45/76 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/877 (2013.01);
Abstract

Control of lateral strain and lateral strain ratio (d/d) between template and substrate through the selection of template and/or substrate thicknesses (Tand/or T), control of template and/or substrate back pressure (Pand/or P), and/or selection of material stiffness are described.


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