The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
May. 28, 2013
Globalfoundries Inc., Grand Cayman, KY;
Moosung M. Chae, Englewood Cliffs, NJ (US);
Errol Todd Ryan, Clifton Park, NY (US);
Nicholas Vincent Licausi, Watervliet, NY (US);
Christian Witt, Woodbridge, CT (US);
Ailian Zhao, Slingerlands, NY (US);
Ming He, Slingerlands, NY (US);
Sean X. Lin, Watervliet, NY (US);
Xunyuan Zhang, Albany, NY (US);
Kunaljeet Tanwar, Slingerlands, NY (US);
Global Foundries Inc., Grand Cayman, KY;
Abstract
A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing material; removing exposed pore-stuffing material at the surface of the trench to form exposed pores; and forming a self-forming barrier layer on the surface of the trench.