The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 09, 2012
Jaroslaw W. Winniczek, Daly City, CA (US);
Frank Y. Lin, Fremont, CA (US);
Alan J. Miller, Moraga, CA (US);
Qing Xu, Fremont, CA (US);
Seongjun Heo, Pleasanton, CA (US);
Jin Hwan Ham, Soeul, KR;
Sang Joon Yoon, Gyeonggi-do, KR;
Camelia Rusu, Pleasanton, CA (US);
Jaroslaw W. Winniczek, Daly City, CA (US);
Frank Y. Lin, Fremont, CA (US);
Alan J. Miller, Moraga, CA (US);
Qing Xu, Fremont, CA (US);
Seongjun Heo, Pleasanton, CA (US);
Jin Hwan Ham, Soeul, KR;
Sang Joon Yoon, Gyeonggi-do, KR;
Camelia Rusu, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.