The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2014

Filed:

Feb. 20, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yi-Chuan Teng, Zhubei, TW;

Jung-Huei Peng, Jhubei, TW;

Shang-Ying Tsai, Pingzhen, TW;

Hsin-Ting Huang, Bade, TW;

Lin-Min Hung, Longtan Township, TW;

Yao-Te Huang, Hsinchu, TW;

Chin-Yi Cho, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 29/06 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/185 (2013.01); H01L 29/06 (2013.01);
Abstract

A method for fabricating a semiconductor device is disclosed. A first substrate is arranged over a second substrate. A wafer bonding process is performed on the semiconductor device. First regions of the device are enclosed by the bonding process. Second regions of the device remain exposed. One or more processes are performed on the exposed second regions, after performing the wafer bonding process. The one or more processes include a fill process that forms a fill material within the exposed second regions. An edge seal material is applied on the first and second substrates after performing the one or more processes.


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