The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Nov. 19, 2009
Ching-yu Lo, Hsinchu, TW;
Bo-jiun Lin, Jhubei, TW;
Hai-ching Chen, Hsinchu, TW;
Tien-i Bao, Hsin-Chu, TW;
Shau-lin Shue, Hsinchu, TW;
Chen-hua Yu, Hsin-Chu, TW;
Ching-Yu Lo, Hsinchu, TW;
Bo-Jiun Lin, Jhubei, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-I Bao, Hsin-Chu, TW;
Shau-Lin Shue, Hsinchu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device has a dual damascene structure including a lower via portion and an upper line portion. The lower via portion is formed in a polyimide layer, and the upper line portion is formed in an inter-metal dielectric (IMD) layer formed of USG or polyimide. A passivation layer is formed on the IMD layer, and a bond pad is formed overlying the passivation layer to electrically connect the upper line portion.