The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Oct. 13, 2011
Applicants:
Ku-feng Yang, Dali, TW;
Tsang-jiuh Wu, Hsinchu, TW;
Yi-hsiu Chen, Hsinchu, TW;
Ebin Liao, Xinzhu, TW;
Yuan-hung Liu, Hsinchu, TW;
Wen-chih Chiou, Miaoli, TW;
Inventors:
Ku-Feng Yang, Dali, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Yi-Hsiu Chen, Hsinchu, TW;
Ebin Liao, Xinzhu, TW;
Yuan-Hung Liu, Hsinchu, TW;
Wen-Chih Chiou, Miaoli, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
The embodiments of forming a through substrate via (TSV) structure described enable reducing risk of damaging gate structures due to over polishing of an inter-level dielectric layer (ILD) layer. The TSV structure with a wider opening near one end also enables better gapfill.