The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Mar. 25, 2008
Dean J. Larson, Pleasanton, CA (US);
Babak Kadkhodayan, Hayward, CA (US);
Di Wu, Newark, CA (US);
Kenji Takeshita, Fremont, CA (US);
Bi-ming Yen, Fremont, CA (US);
Xingcai Su, Fremont, CA (US);
William M. Denty, Jr., San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Dean J. Larson, Pleasanton, CA (US);
Babak Kadkhodayan, Hayward, CA (US);
Di Wu, Newark, CA (US);
Kenji Takeshita, Fremont, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Xingcai Su, Fremont, CA (US);
William M. Denty, Jr., San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.