The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jun. 29, 2006
Applicants:
Yi-li Hsiao, Hsinchu, TW;
Jerry Hwang, Hsin Chu, TW;
Jyh-cherng Sheu, Hsin Chu, TW;
Lawrance Sheu, Hsinchu, TW;
Jean Wang, Hsin Chu, TW;
Chen-hua Yu, Hsin-Chu, TW;
Inventors:
Yi-Li Hsiao, Hsinchu, TW;
Jerry Hwang, Hsin Chu, TW;
Jyh-Cherng Sheu, Hsin Chu, TW;
Lawrance Sheu, Hsinchu, TW;
Jean Wang, Hsin Chu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Assignee:
Taiwan semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
C23C 14/54 (2013.01);
Abstract
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.