The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 20, 2011
Tzu-yen Hsieh, Taipei, TW;
Chang Ming-ching, Hsinchu, TW;
Chun-hung Lee, Zhudong Town, TW;
Yih-ann Lin, Jhudong Township, TW;
De-fang Chen, Lujhu Township, TW;
Chao-cheng Chen, Shin-Chu, TW;
Tzu-Yen Hsieh, Taipei, TW;
Chang Ming-Ching, Hsinchu, TW;
Chun-Hung Lee, Zhudong Town, TW;
Yih-Ann Lin, Jhudong Township, TW;
De-Fang Chen, Lujhu Township, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Abstract
A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch Pis formed on the second material layer. The second material layer is etched by using the patterned mask layer as a mask to form the first features in the second material layer. The patterned mask layer is trimmed. A plurality of dopants is introduced into the second material layer not covered by the trimmed patterned mask layer. The trimmed patterned mask layer is removed to expose un-doped second material layer. The un-doped second material layer is selectively removed to form a plurality of second features with a second pitch P. Pis smaller than P.