The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Aug. 10, 2011
Applicants:

Chun Hui Yu, Zhubei, TW;

Chih-hang Tung, Hsin-Chu, TW;

Tung-liang Shao, Hsin-Chu, TW;

Chen-hua Yu, Hsin-Chu, TW;

Da-yuan Shih, Hsin-Chu, TW;

Inventors:

Chun Hui Yu, Zhubei, TW;

Chih-Hang Tung, Hsin-Chu, TW;

Tung-Liang Shao, Hsin-Chu, TW;

Chen-Hua Yu, Hsin-Chu, TW;

Da-Yuan Shih, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/97 (2013.01); H01L 21/76805 (2013.01); H01L 21/76838 (2013.01); H01L 25/0657 (2013.01);
Abstract

A multi-chip wafer level package comprises three stacked semiconductor dies. A first semiconductor die is embedded in a first photo-sensitive material layer. A second semiconductor die is stacked on top of the first semiconductor die wherein the second semiconductor die is face-to-face coupled to the first semiconductor die. A third semiconductor die is back-to-back attached to the second semiconductor die. Both the second semiconductor die and the third semiconductor die are embedded in a second photo-sensitive material layer. The multi-chip wafer level package further comprises a plurality of through assembly vias formed in the first photo-sensitive material layer and the second photo-sensitive material layer.


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