The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jan. 15, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Chi-Yuan Sun, Yunlin County, TW;
Chien-Hao Chen, Yunlin County, TW;
Hsin-Fu Huang, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Wei-Yu Chen, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Tsun-Min Cheng, Changhua County, TW;
Chin-Fu Lin, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The method for forming a semiconductor structure includes first providing a substrate. Then, a TiN layer is formed on the substrate at a rate between 0.3 and 0.8 angstrom/second. Finally, a poly-silicon layer is formed directly on the TiN layer. Since the TiN in the barrier layer is formed at a low rate so as to obtain a good quality, the defects in the TiN layer or the defects on the above layer, such as gate dummy layer or gate cap layer, can be avoided.