The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jun. 29, 2012
Willem-jan Toren, St. Maximin de la Sainte Baume, FR;
Bruno Villard, Aix en Provence, FR;
Elsa Hugonnard-bruyere, Fuveau, FR;
Gaetan Toulon, Toulouse, FR;
Frederic Morancho, Ramonville Saint-Agne, FR;
Ignasi Cortes Mayol, Saint Cugat del Valles, ES;
Thierry Pedron, Bouc Bel Air, FR;
Willem-Jan Toren, St. Maximin de la Sainte Baume, FR;
Bruno Villard, Aix en Provence, FR;
Elsa Hugonnard-Bruyere, Fuveau, FR;
Gaetan Toulon, Toulouse, FR;
Frederic Morancho, Ramonville Saint-Agne, FR;
Ignasi Cortes Mayol, Saint Cugat del Valles, ES;
Thierry Pedron, Bouc Bel Air, FR;
Atmel Rousset S.A.S., Rousset Cedez, FR;
Laas-CNRS, Paris Cedex, FR;
Abstract
A p-channel LDMOS device with a controlled n-type buried layer (NBL) is disclosed. A Shallow Trench Isolation (STI) oxidation is defined, partially or totally covering the drift region length. The NBL layer, which can be defined with the p-well mask, connects to the n-well diffusion, thus providing an evacuation path for electrons generated by impact ionization. High immunity to the Kirk effect is also achieved, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region which increases the RESURF effectiveness, thus improving BV. An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region (charge balance conditions). The p-well implanted dose can be further increased to maintain a charge balance, which leads to an Rdson reduction.