This inventor holds 2 USPTO granted patents. Top assignees: Atmel Rousset S.a.s., Centre National De La Recherche Scientifique, Laas-Cnre. Active years: 2012-2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Sant Cugat del Valles, ES (2012)
- Saint Cugat del Valles, ES (2014)
Company Filing History:
2 out of 28 
1 out of 5,383 
1 out of 1 Years Active: 2012-2014
Title: Innovations by Ignasi Cortes Mayol: A Look at His Contributions in Electrical Engineering
Introduction
Ignasi Cortes Mayol, an accomplished inventor based in Saint Cugat del Valles, Spain, has made significant contributions to the field of electrical engineering, particularly in the area of power devices. With a notable portfolio of two patents, Cortes Mayol's work emphasizes the enhancement of semiconductor performance and device reliability.
Latest Patents
Cortes Mayol's latest innovation is the "Enhanced HVPMOS" patent, which describes a p-channel LDMOS device featuring a controlled n-type buried layer (NBL). This invention incorporates a Shallow Trench Isolation (STI) oxidation technique that covers the drift region length, significantly improving device performance. The NBL layer connects to the n-well diffusion, providing an evacuation path for electrons generated by impact ionization, thereby enhancing immunity to the Kirk effect. This innovation results in an improved safe-operating-area (SOA) and allows for optimized charge balance within the drift region, ultimately leading to enhanced breakdown voltage (BV) and reduced Rdson.
Career Highlights
Throughout his career, Ignasi Cortes Mayol has worked with reputable companies contributing to innovative projects and advancements in technology. Notable among these are Atmel Rousset S.a.s and LAAS-CNRS, where his expertise in semiconductor technology has been invaluable. His work continues to influence the progress of semiconductor developments in global markets.
Collaborations
In his innovative journey, Cortes Mayol has collaborated with several talented individuals, including coworkers such as Willem-Jan Toren and Bruno Villard. These collaborations exemplify the teamwork and collective expertise that drive forward-thinking advancements in electrical engineering.
Conclusion
Ignasi Cortes Mayol's contributions to the field of electrical engineering through his innovative patents reflect a commitment to enhancing semiconductor technology. With his latest work on the Enhanced HVPMOS device, he demonstrates how targeted innovations can lead to significant improvements in device performance and reliability. As he continues to forge new paths in technology, Cortes Mayol remains a prominent figure in the world of inventions and patents.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile