This inventor holds 2 USPTO granted patents. Top assignees: Atmel Rousset S.a.s., Centre National De La Recherche Scientifique, Laas-Cnre. Active years: 2012-2014.
Company Filing History:
2 out of 28 
1 out of 5,383 
1 out of 1 Years Active: 2012-2014
Title: Frederic Morancho: Pioneering Enhancements in LDMOS Technology
Introduction
Frederic Morancho is an innovative inventor based in Ramonville Saint-Agne, France. With a strong emphasis on advancements in semiconductor technology, he holds two patents that showcase his significant contributions to the field.
Latest Patents
Morancho's latest patent, Enhanced HVPMOS, describes a p-channel LDMOS device featuring a controlled n-type buried layer (NBL). This invention reveals a technique for shallow trench isolation (STI) oxidation, which partially or fully covers the drift region length. The NBL layer, defined with the p-well mask, is connected to the n-well diffusion, creating an effective evacuation path for electrons produced by impact ionization. The innovation achieves high immunity to the Kirk effect, thus improving the safe-operating-area (SOA) significantly. Moreover, the incorporation of the NBL deep within the drift region bolsters a space-charge depletion region, enhancing RESURF effectiveness and improving breakdown voltage (BV). The optimal NBL implanted dose ensures charge balance among n and p doping in the drift region, while increasing the p-well implanted dose maintains this balance, leading to reduced Rdson.
Career Highlights
Throughout his career, Frederic has worked with notable organizations, including Atmel Rousset S.A.S. and LAAS-CNRS, where he applied his expertise to develop innovative semiconductor solutions. His work continues to influence the industry's trajectory towards more efficient and reliable devices.
Collaborations
Morancho has collaborated with talented professionals like Willem-Jan Toren and Bruno Villard, which has contributed to the success of his innovations. These collaborative efforts exemplify the importance of teamwork in driving technological advancements.
Conclusion
Frederic Morancho's work exemplifies groundbreaking innovation within the realm of semiconductor technology. His patents, particularly the Enhanced HVPMOS, not only enhance current technologies but also pave the way for future advancements in the field. As he continues to push the boundaries of LDMOS devices, his contributions will undoubtedly leave a lasting impact on the industry.