Company Filing History:
Years Active: 2012-2014
Title: Gaetan Toulon: Innovator in Semiconductor Technology
Introduction
Gaetan Toulon is a prominent inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced LDMOS devices. With a total of 2 patents to his name, Toulon's work has had a notable impact on the industry.
Latest Patents
One of Gaetan Toulon's latest patents is titled "Enhanced HVPMOS." This patent discloses a p-channel LDMOS device featuring a controlled n-type buried layer (NBL). The design includes a Shallow Trench Isolation (STI) oxidation that partially or totally covers the drift region length. The NBL layer, defined with the p-well mask, connects to the n-well diffusion, providing an evacuation path for electrons generated by impact ionization. This innovation achieves high immunity to the Kirk effect, resulting in a significantly improved safe-operating-area (SOA). The addition of the NBL deep inside the drift region supports a space-charge depletion region, which increases the RESURF effectiveness and improves breakdown voltage (BV). An optimum NBL implanted dose can be set to ensure fully compensated charge balance among n and p doping in the drift region. Furthermore, the p-well implanted dose can be increased to maintain charge balance, leading to a reduction in Rdson.
Career Highlights
Throughout his career, Gaetan Toulon has worked with notable companies such as Atmel Rousset S.A.S. and LAAS-CNRS. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.
Collaborations
Some of Gaetan Toulon's coworkers include Willem-Jan Toren and Bruno Villard. Their collaboration has likely fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Gaetan Toulon is a distinguished inventor whose work in semiconductor technology has led to significant advancements in LDMOS devices. His contributions continue to influence the industry, showcasing the importance of innovation in technology.
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