This inventor holds 2 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Atmel Rousset S.a.s., Centre National De La Recherche Scientifique, Laas-Cnre. Active years: 2012-2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
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1 out of 1 Years Active: 2012-2014
Title: **Innovator Spotlight: Elsa Hugonnard-Bruyère**
Introduction
Elsa Hugonnard-Bruyère is a prominent inventor based in Fuveau, France, recognized for her contributions to the field of semiconductor technology. With a total of two patents to her name, she has developed innovative designs that enhance the performance and reliability of p-channel LDMOS devices.
Latest Patents
Her latest patent, titled "Enhanced HVPMOS," introduces a groundbreaking p-channel LDMOS device featuring a controlled n-type buried layer (NBL). This device incorporates a Shallow Trench Isolation (STI) oxidation, which partially or entirely covers the drift region length. The NBL layer, defined with the p-well mask, connects to the n-well diffusion, providing an evacuation path for electrons generated by impact ionization. This innovation yields high immunity to the Kirk effect, significantly enhancing the safe-operating-area (SOA) of the device. Furthermore, the NBL deep within the drift region supports a space-charge depletion region, increasing the RESURF effectiveness and improving the breakdown voltage (BV). An optimum NBL implanted dose can ensure a balanced charge among n and p doping in the drift region, improving performance metrics such as resistance (Rdson) reduction.
Career Highlights
Elsa's professional journey includes significant tenure at respected companies such as Atmel Rousset S.A.S. and LAAS-CNRS, where she honed her skills and made impactful contributions to semiconductor research and development.
Collaborations
Throughout her career, Elsa has collaborated with esteemed colleagues, including Willem-Jan Toren and Bruno Villard, further enriching her work through shared knowledge and expertise.
Conclusion
Elsa Hugonnard-Bruyère's innovative work and patents exemplify her commitment to advancing technology in the semiconductor industry. Her contributions, particularly in the development of the Enhanced HVPMOS device, highlight the importance of innovation in creating reliable and efficient electronic systems. Her career serves as an inspiration for aspiring inventors and engineers in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile