Thierry Pedron

Title: Innovator and Inventor Thierry Pedron: Pioneering Advances in Power Electronics

Introduction

Thierry Pedron, an accomplished inventor based in Bouc Bel Air, France, has made significant contributions to the field of power electronics. With two patents to his name, his work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his notable inventions is the "Enhanced HVPMOS," which introduces a p-channel LDMOS device that features a controlled n-type buried layer (NBL). This innovative design incorporates Shallow Trench Isolation (STI) oxidation to partially or fully cover the drift region length. The NBL layer is strategically connected to the n-well diffusion, providing an evacuation path for electrons generated by impact ionization. This breakthrough achieves high immunity to the Kirk effect, resulting in a significantly improved safe-operating-area (SOA). Additionally, the NBL supports a space-charge depletion region that enhances the RESURF effectiveness, thus improving breakdown voltage (BV). With optimal NBL implanted doses, Thierry ensures fully compensated charge balance between n and p doping, further leading to an Rdson reduction, which elevates device performance.

Career Highlights

Throughout his career, Thierry has been affiliated with renowned organizations that shape the landscape of technology and electronics. His experience includes significant positions at Atmel, Rousset S.A.S. and LAAS-CNRS, where he contributed his expertise in power semiconductor research and development. These roles have allowed him to influence the direction of innovation within the industry.

Collaborations

In his journey as an inventor, Thierry has collaborated with esteemed professionals, including Willem-Jan Toren and Bruno Villard. Together, their collective knowledge and skills have propelled advancements in semiconductor technology, emphasizing the importance of teamwork in fostering innovation.

Conclusion

Thierry Pedron's dedication to innovation and his contributions to the field of power electronics underscore his status as a vital figure in the realm of semiconductor inventions. His groundbreaking patents, particularly the Enhanced HVPMOS, exemplify his commitment to improving device performance and efficiency. As technology continues to evolve, the impact of his work will undoubtedly resonate within the industry for years to come.