The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Sep. 24, 2010
Shintaro Aoyama, Kohfu, JP;
Robert D. Clark, Schnectady, NY (US);
Steven P. Consiglio, Albany, NY (US);
Marinus Hopstaken, Carmel, NY (US);
Hemanth Jagannathan, Guilderland, NY (US);
Paul Charles Jamison, Hopewell Junction, NY (US);
Gert Leusink, Salt Point, NY (US);
Barry Paul Linder, Hastings-on-Hudson, NY (US);
Vijay Narayanan, New York, NY (US);
Cory Wajda, Sand Lake, NY (US);
Shintaro Aoyama, Kohfu, JP;
Robert D. Clark, Schnectady, NY (US);
Steven P. Consiglio, Albany, NY (US);
Marinus Hopstaken, Carmel, NY (US);
Hemanth Jagannathan, Guilderland, NY (US);
Paul Charles Jamison, Hopewell Junction, NY (US);
Gert Leusink, Salt Point, NY (US);
Barry Paul Linder, Hastings-on-Hudson, NY (US);
Vijay Narayanan, New York, NY (US);
Cory Wajda, Sand Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.