The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Apr. 12, 2012
Daniel Pascual, Wolcott, VT (US);
Jeremiah Hebding, Poughkeepsie, NY (US);
Megha Rao, Clifton Park, NY (US);
Colin Mcdonough, Albany, NY (US);
Douglas Duane Coolbaugh, Highland, NY (US);
Joseph Piccirillo, Jr., Clifton Park, NY (US);
Michael Liehr, Guilderland, NY (US);
Daniel Pascual, Wolcott, VT (US);
Jeremiah Hebding, Poughkeepsie, NY (US);
Megha Rao, Clifton Park, NY (US);
Colin McDonough, Albany, NY (US);
Douglas Duane Coolbaugh, Highland, NY (US);
Joseph Piccirillo, Jr., Clifton Park, NY (US);
Michael Liehr, Guilderland, NY (US);
The Research Foundation of State University of New York, Albany, NY (US);
Abstract
A method is provided for bonding a die to a base technology wafer and includes: providing a device wafer having a front, back, at least one side, and at least one TSV, wherein the back contains a substrate material; providing a carrier wafer having a front, back, and at least one side; bonding the wafers using an adhesive; removing the substrate material and wet etching, from the device wafer's back side, to expose at least one metallization scheme feature; processing the device wafer's back side to create at least one backside redistribution layer; removing the device wafer from the carrier wafer; dicing the device wafer into individual die; providing a base technology wafer; coating the front of the base technology wafer with a sacrificial adhesive; placing the front of the individual die onto the front of the base technology wafer; and bonding the individual die to the base technology wafer.