The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jun. 24, 2011
Michael Budach, Hanau, DE;
Tristan Bret, Darmstadt, DE;
Klaus Edinger, Lorsch, DE;
Thorsten Hofmann, Rodgau, DE;
Heiko Feldmann, Aalen, DE;
Johannes Ruoff, Aalen, DE;
Michael Budach, Hanau, DE;
Tristan Bret, Darmstadt, DE;
Klaus Edinger, Lorsch, DE;
Thorsten Hofmann, Rodgau, DE;
Heiko Feldmann, Aalen, DE;
Johannes Ruoff, Aalen, DE;
Carl Zeiss SMS GmbH, Jena, DE;
Carl Zeiss SMT GmbH, Oberkochen, DE;
Abstract
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.