The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Apr. 08, 2011
Anantha K. Subramani, San Jose, CA (US);
John C. Forster, Mt. View, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Michael S. Jackson, Sunnyvale, CA (US);
Xinliang LU, Fremont, CA (US);
Wei W. Wang, Santa Clara, CA (US);
Xinyu Fu, Fremont, CA (US);
Yu Lei, Foster City, CA (US);
Anantha K. Subramani, San Jose, CA (US);
John C. Forster, Mt. View, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Michael S. Jackson, Sunnyvale, CA (US);
Xinliang Lu, Fremont, CA (US);
Wei W. Wang, Santa Clara, CA (US);
Xinyu Fu, Fremont, CA (US);
Yu Lei, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.