The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Apr. 17, 2012
Hung-chun Wang, Taichung, TW;
Ming-hui Chih, Luzhou, TW;
Yu-po Tang, Taipei, TW;
Chia-ping Chiang, Taipei, TW;
Feng-ju Chang, Hsinchu, TW;
Cheng Kun Tsai, Hsinchu, TW;
Wen-chun Huang, Tainan, TW;
Ru-gun Liu, Zhubei, TW;
Hung-Chun Wang, Taichung, TW;
Ming-Hui Chih, Luzhou, TW;
Yu-Po Tang, Taipei, TW;
Chia-Ping Chiang, Taipei, TW;
Feng-Ju Chang, Hsinchu, TW;
Cheng Kun Tsai, Hsinchu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.