The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
May. 31, 2012
Pei-shiang Chen, Hsinchu, TW;
Hung-chun Wang, Taichung, TW;
Jeng-horng Chen, Hsin-Chu, TW;
Cheng-hung Chen, Changhua, TW;
Shih-chi Wang, Taipei, TW;
Nian-fuh Cheng, Hsinchu, TW;
Chia-chi Lin, Hsinchu, TW;
Pei-Shiang Chen, Hsinchu, TW;
Hung-Chun Wang, Taichung, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Cheng-Hung Chen, Changhua, TW;
Shih-Chi Wang, Taipei, TW;
Nian-Fuh Cheng, Hsinchu, TW;
Chia-Chi Lin, Hsinchu, TW;
Taiwan Semicondcutor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.