The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2013

Filed:

Sep. 16, 2011
Applicants:

Eiji Kitagawa, Yokohama, JP;

Tadaomi Daibou, Yokohama, JP;

Yutaka Hashimoto, Kawasaki, JP;

Masaru Tokou, Yokohama, JP;

Tadashi Kai, Tokyo, JP;

Makoto Nagamine, Tokyo, JP;

Toshihiko Nagase, Yokohama, JP;

Katsuya Nishiyama, Yokohama, JP;

Koji Ueda, Kamakura, JP;

Hiroaki Yoda, Kawasaki, JP;

Kay Yakushiji, Tsukuba, JP;

Shinji Yuasa, Tsukuba, JP;

Hitoshi Kubota, Tsukuba, JP;

Taro Nagahama, Tsukuba, JP;

Akio Fukushima, Tsukuba, JP;

Koji Ando, Tsukuba, JP;

Inventors:

Eiji Kitagawa, Yokohama, JP;

Tadaomi Daibou, Yokohama, JP;

Yutaka Hashimoto, Kawasaki, JP;

Masaru Tokou, Yokohama, JP;

Tadashi Kai, Tokyo, JP;

Makoto Nagamine, Tokyo, JP;

Toshihiko Nagase, Yokohama, JP;

Katsuya Nishiyama, Yokohama, JP;

Koji Ueda, Kamakura, JP;

Hiroaki Yoda, Kawasaki, JP;

Kay Yakushiji, Tsukuba, JP;

Shinji Yuasa, Tsukuba, JP;

Hitoshi Kubota, Tsukuba, JP;

Taro Nagahama, Tsukuba, JP;

Akio Fukushima, Tsukuba, JP;

Koji Ando, Tsukuba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.


Find Patent Forward Citations

Kitagawa, Eiji. (2013). Magnetoresistive effect element, magnetic memory (U.S. Patent No. 8502331). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8502331

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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