Yokohama, Japan

Masaru Tokou


Average Co-Inventor Count = 11.4

ph-index = 3

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2012-2013

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3 patents (USPTO):

Title: Masaru Tokou: Innovator in Magnetoresistive Technology

Introduction

Masaru Tokou is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of magnetoresistive technology, holding a total of 3 patents. His work focuses on the development of advanced magnetic memory elements that have potential applications in various electronic devices.

Latest Patents

Tokou's latest patents include innovative designs for magnetoresistive elements and magnetic memory. One of his notable inventions describes a magnetoresistive element that features a first ferromagnetic layer and a second ferromagnetic layer, both having axes of easy magnetization in a direction perpendicular to the film plane. This design incorporates a nonmagnetic layer placed between the two ferromagnetic layers, along with interfacial magnetic layers that enhance performance. Another patent outlines a magnetoresistive effect element that includes a first magnetic layer with perpendicular anisotropy and a second magnetic layer with a variable magnetization direction, separated by a nonmagnetic layer. These inventions demonstrate Tokou's expertise in creating efficient and effective magnetic memory solutions.

Career Highlights

Masaru Tokou is associated with Kabushiki Kaisha Toshiba, a leading technology company known for its innovations in electronics and information technology. His work at Toshiba has allowed him to explore and develop cutting-edge technologies in the field of magnetoresistive elements.

Collaborations

Throughout his career, Tokou has collaborated with notable colleagues such as Tadaomi Daibou and Eiji Kitagawa. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Masaru Tokou is a distinguished inventor whose work in magnetoresistive technology has paved the way for advancements in magnetic memory applications. His contributions continue to influence the field and inspire future innovations.

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