The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Nov. 20, 2008
Matt Yeh, Hsinchun, TW;
Fan-yi Hsu, Toufen Town, Miaoli County, TW;
Shun Wu Lin, Taichung, TW;
Shu-yuan Ku, Hsin-Chu, TW;
Hui Ouyang, Chubei, TW;
Matt Yeh, Hsinchun, TW;
Fan-Yi Hsu, Toufen Town, Miaoli County, TW;
Shun Wu Lin, Taichung, TW;
Shu-Yuan Ku, Hsin-Chu, TW;
Hui Ouyang, Chubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle.