The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Apr. 18, 2011
Chia-hua Chu, Zhubei, TW;
Yi Heng Tsai, Hsinchu, TW;
Kai-chih Liang, Zhubei, TW;
Chia-pao Shu, Hsinchu, TW;
Li-cheng Chu, Taipei, TW;
Kuei-sung Chang, Kaohsiung, TW;
Hsueh-an Yang, Taipei, TW;
Chung-hsien Lin, Hsinchu, TW;
Chia-Hua Chu, Zhubei, TW;
Yi Heng Tsai, Hsinchu, TW;
Kai-Chih Liang, Zhubei, TW;
Chia-Pao Shu, Hsinchu, TW;
Li-Cheng Chu, Taipei, TW;
Kuei-Sung Chang, Kaohsiung, TW;
Hsueh-An Yang, Taipei, TW;
Chung-Hsien Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.