The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 18, 2011
Tong Fang, Fremont, CA (US);
Yunsang Kim, Monte Sereno, CA (US);
Andrew D. Bailey, Iii, Pleasanton, CA (US);
Olivier Rigoutat, Bethel, CT (US);
George Stojakovic, Wappingers Falls, NY (US);
Tong Fang, Fremont, CA (US);
Yunsang Kim, Monte Sereno, CA (US);
Andrew D. Bailey, III, Pleasanton, CA (US);
Olivier Rigoutat, Bethel, CT (US);
George Stojakovic, Wappingers Falls, NY (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.