The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2012

Filed:

Jun. 27, 2008
Applicants:

Dean Wang, Tainan, TW;

Chien-hsiun Lee, Hsinchu, TW;

Chen-shien Chen, Zhubei, TW;

Clinton Chao, Hsinchu, TW;

Mirng-ji Lii, Hsinchu County, TW;

Tjandra Winata Karta, Hsin-Chu County, TW;

Inventors:

Dean Wang, Tainan, TW;

Chien-Hsiun Lee, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Clinton Chao, Hsinchu, TW;

Mirng-Ji Lii, Hsinchu County, TW;

Tjandra Winata Karta, Hsin-Chu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device is provided which includes providing a first device, a second device, and a third device, providing a first coating material between the first device and the second device, the first coating material being uncured, providing a second coating material between the second device and the third device, the second coating material being uncured, and thereafter, curing the first and second coating materials in a same process.


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