The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Dec. 12, 2008
Bruce W. Peuse, San Carlos, CA (US);
Yaozhi HU, San Jose, CA (US);
Paul Janis Timans, Mountain View, CA (US);
Guangcai Xing, Fremont, CA (US);
Wilfried Lerch, Dornstadt, DE;
Sing-pin Tay, Fremont, CA (US);
Stephen E. Savas, Fremont, CA (US);
Georg Roters, Duelmen, DE;
Zsolt Nenyei, Blaustein, DE;
Ashok Sinha, Los Altos Hills, CA (US);
Bruce W. Peuse, San Carlos, CA (US);
Yaozhi Hu, San Jose, CA (US);
Paul Janis Timans, Mountain View, CA (US);
Guangcai Xing, Fremont, CA (US);
Wilfried Lerch, Dornstadt, DE;
Sing-Pin Tay, Fremont, CA (US);
Stephen E. Savas, Fremont, CA (US);
Georg Roters, Duelmen, DE;
Zsolt Nenyei, Blaustein, DE;
Ashok Sinha, Los Altos Hills, CA (US);
Mattson Technology, Inc., Fremont, CA (US);
Abstract
Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.