The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Nov. 02, 2009
Kunie Ogata, Kikuchi-Gun, JP;
Koki Nishimuko, Kikuchi-Gun, JP;
Hiroshi Tomita, Kikuchi-Gun, JP;
Yoshio Kimura, Kikuchi-Gun, JP;
Ryouichi Uemura, Kikuchi-Gun, JP;
Michio Tanaka, Kikuchi-Gun, JP;
Kunie Ogata, Kikuchi-Gun, JP;
Koki Nishimuko, Kikuchi-Gun, JP;
Hiroshi Tomita, Kikuchi-Gun, JP;
Yoshio Kimura, Kikuchi-Gun, JP;
Ryouichi Uemura, Kikuchi-Gun, JP;
Michio Tanaka, Kikuchi-Gun, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.