The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jan. 21, 2010
Tomoharu Obuki, Hitachinaka, JP;
Hiroshi Toyama, Hachioji, JP;
Yasuhiro Mitsui, Fuchu, JP;
Munetoshi Fukui, Higashiyamato, JP;
Yasuhiko Nara, Hitachinaka, JP;
Tohru Ando, Tokyo, JP;
Katsuo Ooki, Kasama, JP;
Tsutomu Saito, Hitachinaka, JP;
Masaaki Komori, Hitachinaka, JP;
Tomoharu Obuki, Hitachinaka, JP;
Hiroshi Toyama, Hachioji, JP;
Yasuhiro Mitsui, Fuchu, JP;
Munetoshi Fukui, Higashiyamato, JP;
Yasuhiko Nara, Hitachinaka, JP;
Tohru Ando, Tokyo, JP;
Katsuo Ooki, Kasama, JP;
Tsutomu Saito, Hitachinaka, JP;
Masaaki Komori, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.