The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
May. 05, 2009
Satoshi Une, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Kenichi Kuwabara, Hikari, JP;
Tomoyoshi Ichimaru, Kudamatsu, JP;
Satoshi Une, Kudamatsu, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Kenichi Kuwabara, Hikari, JP;
Tomoyoshi Ichimaru, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a materialto be etched using a mask pattern composed of a photoresistand inorganic filmsandmade of SiN, SiON, SiO and the like formed on the materialto be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF, CHF, SFand NFis used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the materialto be etched.