The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Apr. 14, 2008
Chien-huei (Adam) Chen, San Jose, CA (US);
Yan Xiong, Sunnyvale, CA (US);
Jianxin Zhang, Santa Clara, CA (US);
Ellis Chang, Saratoga, CA (US);
Tsung-pao Fang, Milpitas, CA (US);
Chien-Huei (Adam) Chen, San Jose, CA (US);
Yan Xiong, Sunnyvale, CA (US);
Jianxin Zhang, Santa Clara, CA (US);
Ellis Chang, Saratoga, CA (US);
Tsung-Pao Fang, Milpitas, CA (US);
KLA-Tencor Corp., San Jose, CA (US);
Abstract
Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.