The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Feb. 20, 2008
Applicants:

Mei H. Sun, Los Altos, CA (US);

Mark Wiltse, Redwood City, CA (US);

Wayne G. Renken, San Jose, CA (US);

Zachary Reid, Los Gatos, CA (US);

Tony Dibiase, San Jose, CA (US);

Inventors:

Mei H. Sun, Los Altos, CA (US);

Mark Wiltse, Redwood City, CA (US);

Wayne G. Renken, San Jose, CA (US);

Zachary Reid, Los Gatos, CA (US);

Tony DiBiase, San Jose, CA (US);

Assignee:

KLA-Tencor Corporation, San Jose, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01D 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors.


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