The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jan. 16, 2009
Jeng-shyan Lin, Tainan, TW;
Dun-nian Yaung, Taipei, TW;
Jen-cheng Liu, Hsin-Chu, TW;
Chun-chieh Chuang, Tainan, TW;
Pao-tung Chen, Tainan Hsien, TW;
Wen-de Wang, Minsyong Township, Chiayi County, TW;
Jyh-ming Hung, Dacun Township, Changhua County, TW;
Jeng-Shyan Lin, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Chun-Chieh Chuang, Tainan, TW;
Pao-Tung Chen, Tainan Hsien, TW;
Wen-De Wang, Minsyong Township, Chiayi County, TW;
Jyh-Ming Hung, Dacun Township, Changhua County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.