The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jul. 12, 2006
Masato Yoshida, Ibaraki-ken, JP;
Toranosuke Ashizawa, Ibaraki-ken, JP;
Hiroki Terazaki, Ibaraki-ken, JP;
Yuuto Ootuki, Ibaraki-ken, JP;
Yasushi Kurata, Ibaraki-ken, JP;
Jun Matsuzawa, Ibaraki-ken, JP;
Kiyohito Tanno, Ibaraki-ken, JP;
Masato Yoshida, Ibaraki-ken, JP;
Toranosuke Ashizawa, Ibaraki-ken, JP;
Hiroki Terazaki, Ibaraki-ken, JP;
Yuuto Ootuki, Ibaraki-ken, JP;
Yasushi Kurata, Ibaraki-ken, JP;
Jun Matsuzawa, Ibaraki-ken, JP;
Kiyohito Tanno, Ibaraki-ken, JP;
Hitachi Chemical Company, Ltd., Tokyo, JP;
Abstract
To polish polishing target surfaces of SiOinsulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cmand ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.