The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Aug. 01, 2006
Kazuhide Hasebe, Minami-alps, JP;
Mitsuhiro Okada, Kai, JP;
Pao-hwa Chou, Kai, JP;
Jun Ogawa, Nirasaki, JP;
Chaeho Kim, Yongin, JP;
Kohei Fukushima, Oshu, JP;
Toshiki Takahashi, Oshu, JP;
Jun Sato, Kai, JP;
Kazuhide Hasebe, Minami-alps, JP;
Mitsuhiro Okada, Kai, JP;
Pao-Hwa Chou, Kai, JP;
Jun Ogawa, Nirasaki, JP;
Chaeho Kim, Yongin, JP;
Kohei Fukushima, Oshu, JP;
Toshiki Takahashi, Oshu, JP;
Jun Sato, Kai, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.